![]() ArticleĬharacteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs Zhang, Meng Zhang, Yamin Li, Baikui Feng, Shiwei Hua, Mengyuan Tang, Xi Wei, Jin Chen, Kevin J. IEEE Journal of the Electron Devices Society, v. Wu, Yanlin Wei, Jin Wang, Maojun Nuo, Muqin Yang, Junjie Lin, Wei Zheng, Zheyang Zhang, Li Hua, Mengyuan Yang, Xuelin Hao, Yilong Chen, Jing Shen, Bo ArticleĬell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off Tang, Ho-Tin Chung, Henry Shu-Hung Chen, Jing ArticleĪn Actively-Passivated p-GaN Gate HEMT with Screening Effect Against Surface Traps IEEE Transactions on Power Electronics, v.
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